Tungsten Oxide (WO3) Sputtering Targets
Purity: 99.9%, Size: 1”, Thickness: 0.125”
Sputtering is a well-established method used to deposit thin films from a wide range of materials onto substrates of various shapes and sizes.
The process using sputtering targets is highly repeatable and scalable, making it suitable for both small research projects and larger production batches involving medium to large substrate areas. Chemical reactions may occur on the target surface, during particle flight, or on the substrate, depending on the process parameters. Although the numerous parameters make sputter deposition complex, they also provide experts with significant control over film growth and microstructure.
Applications of Sputtering Targets
Sputtering targets are used for film deposition. Thin films are deposited by sputtering, a technique that erodes material from a “target” and transfers it onto a “substrate,” such as a silicon wafer.
Semiconductor sputtering targets are used to etch the target when high anisotropic etching is required and selectivity is not critical.
Sputtering targets are also utilized for analytical purposes by gradually removing target material.
An example is secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As sputtering occurs, the concentration and identity of ejected atoms are measured through mass spectrometry. With the aid of sputtering targets, the composition of the material can be determined, and even extremely low impurity levels can be detected.
Sputtering targets also have applications in space. Sputtering is one form of space weathering, a process that alters the physical and chemical properties of airless bodies such as asteroids and the Moon.
