Titanium Carbide (TiC) Sputtering Targets
Purity: 99.5%, Size: 4”, Thickness: 0.250”
Sputtering is a proven technology capable of depositing thin films from a wide range of materials onto substrates of various shapes and sizes.
The process involving sputter targets is repeatable and can be scaled from small research and development projects to larger production runs.
The process with sputter targets can also be adapted for production batches involving medium to large substrate areas. Depending on the process parameters,
chemical reactions may occur on the target surface, in-flight, or on the substrate. Although sputter deposition involves many variables,
this complexity allows experts a high degree of control over the growth and microstructure of the deposited film.
Applications of Sputtering Targets
Sputtering targets are used for film deposition. The deposition produced by sputter targets is a thin-film creation method that involves eroding material
from a “target” source onto a “substrate,” such as a silicon wafer.
Semiconductor sputtering targets are used to etch the target. Sputter etching is chosen when a high degree of etching anisotropy is required
and selectivity is not a major concern.
Sputter targets are also used for analytical purposes by removing material through etching.
One example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered,
the concentration and identity of the sputtered atoms are measured using mass spectrometry. Through the help of the sputtering target,
the composition of the target material can be determined, and even extremely low concentrations of impurities can be detected.
Sputtering targets also have applications in space. Sputtering is one of the processes contributing to space weathering,
which alters the physical and chemical properties of airless bodies such as asteroids and the Moon.
