Titanium Carbide (TiC) Sputtering Targets
Purity: 99.5%, Size: 2”, Thickness: 0.250”
Sputtering is a well-established technology used to deposit thin films from a wide range of materials onto substrates of various shapes and sizes.
The process using sputter targets is repeatable and can be scaled from small research and development projects to larger applications.
The process with sputter targets can also be adapted for production batches involving medium to large substrate areas.
Chemical reactions may occur on the target surface, during material transfer, or on the substrate itself, depending on the process parameters.
Although many parameters make sputter deposition a complex technique, they also provide experts with substantial control over the growth and microstructure of the deposited film.
Applications of Sputtering Targets;
Sputtering targets are used for film deposition. Deposition performed using sputter targets involves eroding material from a “target” source and transferring it onto a “substrate,” such as a silicon wafer.
Semiconductor sputtering targets are used for etching. Sputter etching is selected when a high degree of etching anisotropy is required and selectivity is not a primary concern.
Sputter targets are also used for analytical purposes by gradually removing the target material.
One example is secondary ion mass spectroscopy (SIMS), where the sample is sputtered at a constant rate. As sputtering occurs, the concentration and identity of the sputtered atoms are measured using mass spectrometry. Through the use of a sputtering target, the composition of the material can be determined, and even extremely low impurity levels can be detected.
Sputtering targets also have applications in space. Sputtering is one of the processes involved in space weathering, which alters the physical and chemical properties of airless bodies such as asteroids and the Moon.
