Silicon Carbide (SiC) Sputtering Targets
Purity: 99.5%, Size: 2”, Thickness: 0.250”
Sputtering is a proven technology capable of depositing thin films from a wide variety of materials onto diverse substrate shapes and sizes.
The process with sputter targets is repeatable and can be scaled up from small research and development projects. The process with sputter
targets can be adapted for production batches involving medium to large substrate areas. The chemical reaction can occur on the target
surface, in-flight, or on the substrate depending on the process parameters. The many parameters make sputter deposition a complex process
but allow experts a high degree of control over the growth and microstructure of the deposited area.
Applications of Sputtering Targets;
Sputtering targets are used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering
that involves eroding material from a “target” source onto a “substrate” such as a silicon wafer.
Semiconductor sputtering targets are used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy
is needed and selectivity is not a concern.
Sputter targets are also used for analysis by etching away the target material.
One example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered,
the concentration and identity of sputtered atoms are measured using mass spectrometry. With the help of the sputtering target, the composition of the
target material can be determined, and even extremely low concentrations of impurities are detected.
Sputtering targets also have applications in space. Sputtering is one of the forms of space weathering, a process that changes the physical and
chemical properties of airless bodies, such as asteroids and the Moon.
