Magnesium Fluoride (MgF₂) Sputtering Targets
Purity: 99.9%, Size: 3”, Thickness: 0.125”
Magnesium Fluoride (MgF₂) sputtering targets are used in thin-film deposition processes where high optical clarity, uniformity, and stability are required. Sputtering is applied to deposit films on a wide range of substrate types and shapes. The process can be repeated with high consistency and can be scaled from research-level applications to larger production volumes. Chemical interactions may occur on the target surface, during particle flight, or directly on the substrate, depending on operating parameters. These parameters contribute to the complexity of sputter deposition while allowing precise control over film growth and microstructural characteristics.
Applications of Sputtering Targets
Sputtering targets are utilized for thin-film deposition, where material is removed from the target surface and transferred to a substrate such as a silicon wafer.
They are employed in semiconductor processes for sputter etching, particularly when high anisotropy is required and selectivity is not a primary factor.
Analytical applications also rely on sputtering, as material removal enables the evaluation of composition.
One example occurs in secondary ion mass spectroscopy (SIMS), where the target is continuously sputtered, and the ejected atoms are analyzed to determine composition, including trace impurities at extremely low concentrations.
Sputtering additionally plays a role in space environments. It is one of the mechanisms responsible for space weathering, a process that alters the physical and chemical properties of airless celestial bodies, including asteroids and the lunar surface.
