Carbon (C) Graphite Sputtering Target – Product Details
| Parameter | Details |
|---|---|
| Product Name | Carbon (C) (Graphite) Sputtering Target |
| Purity | 99.999% |
| Size | 4” diameter |
| Thickness | 0.250” |
| Material Characteristics | High-purity graphite, layered structure, excellent thermal and electrical conductivity, chemically stable |
| Film Characteristics | Suitable for thin film deposition, conductive coatings, and analytical applications |
Applications of Carbon (C) Graphite Sputtering Targets
| Application Area | Description |
|---|---|
| Thin Film Deposition | Deposits uniform films onto substrates like silicon wafers. |
| Semiconductor Etching | Enables sputter etching where high anisotropy is needed and selectivity is less critical. |
| Analytical Techniques (SIMS) | Controlled sputtering allows measurement of elemental composition and detection of extremely low impurity concentrations. |
| Space Weathering Studies | Used to study sputtering effects on airless bodies such as asteroids and the Moon. |
| Electronics & Functional Coatings | Applied in PVD for conductive coatings, electrodes, and other electronic components. |
