Bismuth Ferrite (BiFeO3) Sputtering Targets, Indium
Purity: 99.9% Size: 7” Thickness: 0.250”
Sputtering is a reliable method for depositing thin films from a wide variety of materials onto substrates of diverse shapes and sizes. The process is repeatable and scalable, making it suitable for both small-scale R&D and larger production batches. Depending on process parameters, chemical reactions can occur on the target surface, in-flight, or on the substrate, offering experts precise control over film growth and microstructure.
Applications of Sputtering Targets
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Thin Film Deposition: Material is eroded from a target and deposited onto substrates, such as silicon wafers.
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Semiconductor Etching: Sputter etching allows high anisotropy when selectivity is not critical.
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Analytical Uses: Gradual target etching enables composition analysis and detection of trace impurities, as in Secondary Ion Mass Spectroscopy (SIMS).
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Space Applications: Sputtering contributes to space weathering, altering the properties of airless bodies like asteroids and the Moon.
About Bismuth Ferrite (BiFeO3)
Bismuth ferrite (BiFeO3) is an inorganic compound with a perovskite structure and is one of the most promising multiferroic materials. Sputtering targets are typically produced by high-temperature sintering or recrystallization of Bi and Fe oxide mixtures to achieve single-phase BiFeO3. Indium bonding is recommended for these targets.
This Pb-free ferroelectric material is known for high remnant polarization, Curie temperature, and antiferromagnetic Néel temperature. It is one of the few materials exhibiting both magnetic and ferroelectric properties at and above room temperature. Its polarization-induced photovoltaic properties and direct 3.3 eV band gap make BiFeO3 films highly suitable for ferroelectric photovoltaic research, outperforming most other ferroelectric materials.
