Bismuth Ferrite (BiFeO3) Sputtering Targets, Indium
Purity: 99.9% Size: 4” Thickness: 0.250”
Sputtering is a versatile and reliable technique for depositing thin films from various materials onto diverse substrate shapes and sizes. The process is highly repeatable and scalable, making it suitable for both research projects and medium-to-large production batches. Depending on the process parameters, chemical reactions can occur on the target surface, in-flight, or on the substrate, providing precise control over film growth and microstructure.
Applications of Sputtering Targets
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Thin Film Deposition: Erodes material from the target onto substrates such as silicon wafers.
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Semiconductor Etching: Ideal for cases requiring high etching anisotropy where selectivity is less critical.
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Analytical Techniques: Enables compositional analysis and detection of trace impurities, as in Secondary Ion Mass Spectroscopy (SIMS).
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Space Applications: Contributes to space weathering, altering the physical and chemical properties of airless bodies like asteroids and the Moon.
About Bismuth Ferrite (BiFeO3)
Bismuth ferrite (BiFeO3) is an inorganic perovskite-structured compound and a leading multiferroic material. Targets are typically produced by high-temperature sintering or recrystallization of Bi and Fe oxide compounds to achieve a single-phase BiFeO3. Indium bonding is recommended for optimal target performance.
This Pb-free ferroelectric material exhibits exceptional ferroelectric properties, including large remnant polarization, high Curie temperature, and high antiferromagnetic Néel temperature. It uniquely combines magnetic and ferroelectric properties at and above room temperature. Its strong polarization-induced photovoltaic response and 3.3 eV direct band gap make BiFeO3 films highly suitable for advanced ferroelectric photovoltaic studies.
