Bismuth Ferrite (BiFeO3) Sputtering Targets, Indium
Purity: 99.9% Size: 2” Thickness: 0.125”
Sputtering is a reliable method for depositing thin films from diverse materials onto substrates of various shapes and sizes. The process is repeatable and scalable for both small R&D projects and medium-to-large production batches. Depending on the parameters, chemical reactions can occur on the target surface, in-flight, or on the substrate, providing precise control over film growth and microstructure.
Applications of Sputtering Targets
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Thin Film Deposition: Transfers material from the target to substrates like silicon wafers.
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Semiconductor Etching: Used when high anisotropy is needed without selectivity concerns.
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Analytical Techniques: Supports methods such as Secondary Ion Mass Spectroscopy (SIMS) to measure target composition and detect trace impurities.
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Space Applications: Contributes to space weathering, altering the properties of airless bodies like asteroids and the Moon.
About Bismuth Ferrite (BiFeO3)
Bismuth ferrite (BiFeO3) is an inorganic perovskite-structured compound and a highly promising multiferroic material. Targets are typically prepared via high-temperature sintering or recrystallization of Bi and Fe oxide compounds to produce single-phase BiFeO3. Indium bonding is recommended for optimal target performance.
This Pb-free ferroelectric material exhibits exceptional properties, including large remnant polarization, high Curie temperature, and high antiferromagnetic Néel temperature. It uniquely combines magnetic and ferroelectric properties at and above room temperature. Its strong polarization-induced photovoltaic effect and 3.3 eV direct band gap make BiFeO3 films ideal for advanced ferroelectric photovoltaic research.
