Bismuth Ferrite (BiFeO3) Sputtering Targets, Indium
Purity: 99.9% Size: 1” Thickness: 0.125”
Sputtering is a proven technique for depositing thin films from diverse materials onto a variety of substrate shapes. The process is highly repeatable and scalable, suitable for both small research projects and medium-to-large production batches. Depending on process parameters, chemical reactions may occur on the target surface, in-flight, or on the substrate, allowing precise control over film growth and microstructure.
Applications of Sputtering Targets
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Thin Film Deposition: Transfers material from the target onto substrates like silicon wafers.
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Semiconductor Etching: Preferred for processes requiring high etching anisotropy without strict selectivity.
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Material Analysis: Supports techniques like Secondary Ion Mass Spectroscopy (SIMS) to determine composition and detect trace impurities.
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Space Applications: Contributes to space weathering, altering the physical and chemical properties of airless bodies such as asteroids and the Moon.
About Bismuth Ferrite (BiFeO3)
Bismuth ferrite (BiFeO3) is an inorganic perovskite-structured compound and a leading multiferroic material. Sputtering targets are typically prepared via high-temperature sintering or recrystallization of Bi and Fe oxides to produce single-phase BiFeO3. Indium bonding is recommended for optimal performance.
This Pb-free ferroelectric material exhibits outstanding properties including large remnant polarization, high Curie temperature, and high antiferromagnetic Néel temperature. It uniquely combines magnetic and ferroelectric properties at and above room temperature. Its strong polarization-induced photovoltaic effect and 3.3 eV direct band gap make BiFeO3 films ideal for advanced ferroelectric photovoltaic research.
