Bismuth Ferrite (BiFeO3) Sputtering Targets, indium
Purity: 99.9%, Size: 3”, Thickness: 0.125”
Sputtering is a proven technique for depositing thin films from a wide range of materials onto substrates of various shapes and sizes. The process using sputtering targets is repeatable and scalable, making it suitable for both small research projects and larger production batches. The process can be adapted for medium to large substrate areas. Chemical reactions may occur on the target surface, in-flight, or on the substrate, depending on process parameters. Although sputter deposition involves many variables and is therefore complex, it provides experts with a high level of control over film growth and microstructure.
Applications of Sputtering Targets;
Sputtering targets are used for film deposition. The deposition method involves sputtering material from a “target” onto a “substrate,” such as a silicon wafer.
Semiconductor sputtering targets are used for etching applications. Sputter etching is preferred when high anisotropy is required and selectivity is not critical.
Sputter targets are also used for analytical purposes by gradually etching the target material.
One example occurs in secondary ion mass spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As sputtering progresses, the concentration and identity of emitted atoms are measured using mass spectrometry. With the aid of the sputtering target, the composition of the target material can be identified, including extremely low impurity concentrations.
Sputtering targets also have applications in space. Sputtering is a form of space weathering, a process that alters the physical and chemical characteristics of airless bodies such as the Moon and asteroids.
Bismuth Ferrite (BiFeO3)
Bismuth ferrite, with the chemical formula BiFeO3, is an inorganic compound with a perovskite structure and is considered one of the most promising multiferroic materials. A bismuth ferrite sputtering target is generally produced by high-temperature sintering or recrystallizing a mixture of Bi and Fe oxide compounds to form a single-phase BiFeO3 material. Indium bonding is recommended for bismuth ferrite sputtering targets.
Bismuth ferrite is a Pb-free ferroelectric (FE) material known for its excellent ferroelectric characteristics, including high remnant polarization, high Curie temperature, and high antiferromagnetic Néel temperature. It is one of the few materials that exhibits both magnetic and ferroelectric properties at and above room temperature. Recently, polarization-induced photovoltaic properties in bismuth ferrite have gained significant interest due to its large remnant polarization and direct band gap (3.3 eV). Well-prepared bismuth ferrite films offer advantages over many other ferroelectric materials for investigating the ferroelectric photovoltaic effect.
