Aluminum Nitride (AlN) Sputtering Targets
Purity: 99.8% Size: 1” Thickness: 0.125”
Aluminum nitride (AlN) sputtering targets provide precise thin film deposition on a variety of substrate shapes and sizes. The sputtering process is repeatable and scalable from small R&D projects to medium and large production batches. Chemical reactions may occur on the target surface, in-flight, or on the substrate depending on process parameters, allowing experts precise control over film growth and microstructure.
Applications
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Thin-Film Deposition:
Uniformly deposits AlN films onto substrates like silicon wafers. -
Semiconductor Etching:
Ideal for anisotropic etching when selectivity is not critical. -
Material Analysis (SIMS):
Enables detection of target composition and trace impurities via mass spectrometry. -
Space Applications:
Useful for simulating space weathering processes on airless bodies such as asteroids and the Moon. -
Optical & Optoelectronic Devices:
High-quality AlN films with wide band gap (~6.2 eV), high refractive index (~2.0), and low absorption (<10⁻³) are suitable for sensors, LEDs, and other optoelectronic devices.
Material Advantages
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Excellent combination of physical, chemical, and mechanical properties.
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High thermal and chemical stability for use in harsh environments.
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Compatible with reactive DC magnetron sputtering for reproducible, scalable, and cost-effective film growth.
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Film properties depend on deposition conditions such as sputtering power, pulse frequency, duty cycle, growth temperature, and nitrogen/argon flow ratio.
AlN sputtering targets are widely used in applications requiring high precision, stability, and superior film quality.
