Silicon Carbide Wafer (SiC-6H) – 6H
Size: 2”, Thickness: 350 μm, Usable Area: 95%
Technical Properties:
| Resistivity |
|
| 0.02 ~0.1 Ω·cm |
|
Fields of Application for Silicon Carbide (SiC-6H) – 6H Wafer
Silicon carbide (SiC) is a rare synthetic compound of silicon and carbon.
SiC wafers exhibit excellent electrical and thermal properties, low thermal expansion, and superior hardness. They perform reliably at high temperatures and resist corrosion, erosion, and oxidation. Additionally, SiC wafers have a shine surpassing that of diamonds or cubic zirconia.
SiC crystals possess unique physical and electronic properties. SiC-based devices are used in short-wavelength optoelectronics, high-temperature, and radiation-resistant applications. High-power and high-frequency electronic devices made from SiC outperform those based on Si and GaAs.
SiC-based devices have low lattice mismatch with III-nitride epitaxial layers and high thermal conductivity, making them suitable for combustion process monitoring and UV detection. SiC semiconductors operate under extreme conditions, including high temperature, high power, and high radiation.
SiC is employed in manufacturing very high-voltage and high-power devices such as diodes, power transistors, and high-power microwave devices. Compared to conventional Si devices, SiC power devices offer faster switching speeds, higher voltage handling, lower parasitic resistance, smaller size, and reduced cooling requirements due to their high-temperature capability.
While SiC-6H wafers have exceptional electronic properties, they are also the most easily prepared and extensively studied.
Some specific applications of Silicon Carbide (SiC) wafers include: hybrid and electric vehicles, green energy generation, LEDs, and numerous other emerging markets.
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