Silicon Carbide Wafer (SiC-4H) – 4H
Size: 3”, Thickness: 350 μm, 4H Area: 95%
Technical Properties:
| Property | Value |
|---|---|
| Quality | Research Grade |
| Size (inch) | 3” |
| Thickness (μm) | 350 |
| Ra | ≤0.3 |
| 4H Area | 95% |
| Orientation | 4°±0.5° |
| Resistivity | 0.015–0.03 |
| TTV | ≤15 |
| Bow | ≤10 |
| Warp | ≤35 |
| OF Length | 22.0±2.0 |
| IF Length | 11.0±1.5 |
Fields of Application for Silicon Carbide (SiC-4H) – 4H Wafer
Silicon carbide (SiC) is a rare compound of silicon and carbon that is synthetically produced.
Silicon carbide (SiC) wafers provide excellent electrical and thermal properties, including low thermal expansion and superior hardness. They perform well at high temperatures and exhibit high resistance to corrosion, erosion, and oxidation. Additionally, SiC wafers are shinier than diamonds or cubic zirconia.
While Silicon carbide (SiC-4H) – 4H wafers offer superior electronic properties, Silicon carbide (SiC-6H) – 6H wafers are easier to prepare and more extensively studied.
Silicon carbide (SiC) wafers are used for hybrid and electric vehicles.
Silicon carbide (SiC) wafers are used for green energy generation.
Silicon carbide (SiC) wafers are used for LEDs.
Silicon carbide (SiC) wafers are used for many other emerging markets.
