Silicon Carbide Wafer (SiC-4H) – 4H
Size: 2”, Thickness: 350 μm, 4H Area: 80%
Technical Properties:
| Property | Value |
|---|---|
| Quality | Mechanical Grade |
| Size (inch) | 2” |
| Thickness (μm) | 350 |
| Ra | ≤1 |
| 4H area | 80% |
| Orientation | 4°±0.5° |
| Resistivity | 0.015-0.03 |
| TTV | ≤25 |
| Bow | ≤30 |
| Warp | ≤45 |
| OF Length | 16±2 |
| IF Length | 8±1 |
Fields of Application for Silicon Carbide (SiC-4H) – 4H Wafer
Silicon carbide (SiC) is a rare compound of silicon and carbon that is synthetically produced.
Silicon carbide (SiC) wafer has excellent electrical and thermal properties. It offers low thermal expansion, superior hardness, and strong performance at high temperatures. Additionally, silicon carbide (SiC) wafer provides high resistance to corrosion, erosion, and oxidation. It is also more lustrous than diamonds or cubic zirconia.
Silicon carbide (SiC) crystals possess unique physical and electronic characteristics. Silicon carbide–based devices are used in short-wavelength optoelectronics, as well as high-temperature and radiation-resistant applications. High-power and high-frequency electronic devices made with SiC outperform those made with Si and GaAs. Below are some common applications of SiC substrates.
SiC-based devices exhibit low lattice mismatch with III-nitride epitaxial layers. Their high thermal conductivity enables use in combustion monitoring systems and a wide range of UV-detection applications. SiC semiconductor devices also operate effectively in harsh environments involving high temperature, high power, and strong radiation.
SiC is used in the fabrication of high-voltage, high-power devices such as diodes, power transistors, and high-power microwave components. Compared to conventional Si devices, SiC-based power devices deliver faster switching speeds, higher voltage capability, lower parasitic resistance, smaller size, and reduced cooling requirements due to their high-temperature tolerance.
While Silicon carbide (SiC-4H) – 4H wafer offers superior electronic performance, silicon carbide (SiC-6H) – 6H wafer is easier to prepare and more extensively studied.
Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.
