Silicon Carbide Wafer (SiC-4H) – 4H
Size: 2”, Thickness: 350 μm, 4H Area: 95%
Technical Properties:
| Property | Value |
|---|---|
| Quality | Dummy Grade |
| Size (inch) | 2” |
| Thickness (μm) | 350 |
| Ra | ≤1 |
| 4H area | 95% |
| Orientation | 4°±0.5° |
| Resistivity | 0.015-0.03 |
| TTV | ≤15 |
| Bow | ≤25 |
| Warp | ≤35 |
| OF Length | 16±2 |
| IF Length | 8±1 |
Fields of Application for Silicon Carbide (SiC-4H) – 4H Wafer
Silicon carbide (SiC) is a rare compound of silicon and carbon that is synthetically produced.
Silicon carbide (SiC) wafer exhibits excellent electrical and thermal characteristics. It offers low thermal expansion, superior hardness, and strong performance at high temperatures. Additionally, silicon carbide (SiC) wafer provides high resistance to corrosion, erosion, and oxidation. It is also more lustrous than diamonds or cubic zirconia.
Silicon carbide (SiC) crystals possess unique physical and electronic properties. Silicon carbide–based devices are used in short-wavelength optoelectronics and in high-temperature, radiation-resistant applications. High-power and high-frequency electronic devices made with SiC outperform traditional Si and GaAs devices. Below are some popular applications of SiC substrates.
SiC-based devices show low lattice mismatch with III-nitride epitaxial layers. They offer high thermal conductivity and are used for combustion monitoring and various UV-detection applications. SiC semiconductor devices operate well in harsh environments involving high temperatures, high power, and intense radiation.
SiC is used in the fabrication of high-voltage, high-power devices such as diodes, power transistors, and high-power microwave devices. Compared to conventional Si devices, SiC-based power devices provide faster switching speeds, higher voltage capability, lower parasitic resistance, smaller size, and reduced cooling requirements due to their high-temperature tolerance.
While Silicon carbide (SiC-4H) – 4H wafer has superior electronic performance, silicon carbide (SiC-6H) – 6H wafer is more easily prepared and thoroughly studied.
Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.
