Prime Si+SiO₂ Wafer (Wet)
Technical Properties Table
| Parameter | Specification |
|---|---|
| Quality | Prime |
| Materials | Si + SiO₂ (Wet) |
| Size | 3” |
| Orientation | (100) |
| Coating | 300 nm |
| Thickness | 380 ± 25 μm |
| Doping | Boron |
| Resistivity | 1–10 ohm·cm |
| Polished | One Side |
Silicon dioxide wafers, also known as thermal oxide wafers, are produced at elevated temperatures. The thermal oxide layer is typically grown in a horizontal tube furnace operating between 900°C and 1200°C.
Unlike CVD-deposited oxide, thermal oxide is a grown oxide layer, offering superior uniformity, purity, and dielectric strength, making it an excellent insulating layer.
In silicon-based device fabrication, thermal oxide plays a vital role by:
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Passivating the silicon surface
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Acting as a doping barrier
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Serving as a high-quality surface dielectric
Because it provides excellent thickness control and material purity, thermal oxidation is the preferred method for producing high-quality thin oxide layers.
For thicker oxide layers, wet oxidation is used due to its significantly faster growth rate.
