Prime Si+SiO₂ Wafer (Wet)
Technical Properties Table
| Parameter | Specification |
|---|---|
| Quality | Prime |
| Materials | Si + SiO₂ (Wet) |
| Size | 2” |
| Orientation | (111) |
| Coating | 500 nm |
| Thickness | 500 ± 25 μm |
| Doping | Boron |
| Resistivity | 1–20 ohm·cm |
| Polished | Double Side |
Silicon dioxide wafers—commonly known as thermal oxide wafers—are produced at elevated temperatures. The oxide layer is grown in a horizontal tube furnace operating between 900°C and 1200°C.
Thermal oxide is a grown, not deposited, oxide layer, offering:
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Higher thickness uniformity
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Superior dielectric strength
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Excellent insulating performance
In silicon-based devices, the thermal oxide layer is essential for:
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Passivating the silicon surface
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Acting as a doping barrier
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Serving as a high-quality dielectric
Its purity and uniformity make thermal oxidation the preferred method for producing high-quality thin oxide layers.
For thicker layers, wet oxidation is used because it provides a significantly faster growth rate.
