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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 150 nm

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 150 nm

Price range: $89.75 through $1,818.34

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Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 150 nm

Technical Properties:

Quality
Prime

Materials
Si+Si3N4

Size (inch)
4”

Orientation
(100)

Coating
150 nm

Thickness (μm)
525± 25

Doping
Boron

Resistivity (ohm.cm)
1-10

Polished
Double Side

Description

Silicon nitride (Si3N4, SiN) provides exceptional mechanical and thermal stability.

It is commonly used for hard masks, dielectric layers, and passivation coatings.

Silicon nitride is naturally hard and offers excellent thermal shock resistance and oxidation resistance.

It also exhibits high-temperature strength, creep resistance, and oxidation durability.

Its low thermal expansion coefficient ensures strong thermal shock resistance.

For larger inquiries, please contact us.

Download ……………………….. MSDS

Size: 1 piece, 5 pieces, 25 pieces

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