Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 150 nm

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 380± 15 μm, Coating 150 nm

Technical Properties:

Description

Silicon nitride (Si3N4, SiN) provides excellent mechanical and thermal stability.

It is commonly used for hard masks, dielectric layers, and passivation coatings.

Silicon nitride is naturally hard and exhibits strong thermal shock and oxidation resistance.

It also maintains high-temperature strength, creep resistance, and oxidation durability.

Its low thermal expansion coefficient ensures robust thermal shock resistance.

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Download ……………………….. MSDS