Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Arsenic Doped, Resistivity: 0,001-0,005 (ohm.cm), 1 Side Polished, Thickness: 525± 25 μm, Coating 450 nm

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Arsenic Doped, Thickness: 525± 25 μm

Technical Properties:

Description

Silicon nitride (Si3N4, SiN) delivers outstanding mechanical and thermal stability.

It is commonly applied as hard masks, dielectric layers, or passivation coatings.

Silicon nitride is inherently hard and exhibits strong thermal shock and oxidation resistance.

It also maintains high-temperature strength, creep resistance, and oxidation durability.

Its low thermal expansion coefficient provides excellent resistance to thermal shock.

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Download ……………………….. MSDS