Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 300 nm

Prime Si+Si3N4 Wafer

Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 300 nm

Technical Properties:

Description

Silicon nitride (Si3N4, SiN) offers exceptional mechanical and thermal stability.

It is widely used for hard masks, dielectric layers, and passivation coatings.

Silicon nitride is inherently hard and provides strong thermal shock and oxidation resistance.

It also exhibits high-temperature strength, creep resistance, and oxidation durability.

Its low thermal expansion coefficient ensures excellent resistance to thermal shock.

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Download ……………………….. MSDS