Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 150 nm

Prime Si+Si3N4 Wafer

Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 150 nm

Technical Properties:

Description

Silicon nitride (Si3N4, SiN) provides exceptional mechanical and thermal stability.

It is frequently used for hard masks, dielectric layers, and passivation applications.

Silicon nitride is naturally hard and offers strong thermal shock resistance and oxidation resistance.

It also maintains high-temperature strength, creep resistance, and oxidation resistance.

Its low thermal expansion coefficient contributes to excellent thermal shock resistance.

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Download ……………………….. MSDS