Gallium Antimonide (GaSb) Wafers
Size: 2”, Thickness: 500± 25 μm, Orientation: 100
Technical Properties:
| Property | Value |
|---|---|
| Quality | EPI-Ready |
| Size (inch) | 2” |
| Thickness (μm) | 500± 25 |
| Polished | Single Side |
| Dopant | Tellurium (N type) |
| Orientation | 100 |
| Mobility | 2000–3500 |
| EPD | ≤2000 |
| Growth method | VGF |
| OF Length | 16±2 |
| IF Length | 8±1 |
Fields of Application for Gallium Antimonide (GaSb)
The intermetallic compound gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt.
Gallium antimonide (GaSb) is a semiconductor composed of gallium and antimony, belonging to the group III-V compounds.
Gallium antimonide (GaSb) is supplied in polished wafer form.
Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots using the Czochralski method to obtain a single crystal with high purity.
Supplied in polished wafer form, gallium antimonide offers excellent orientation accuracy.
The thickness and orientation of these wafers can be modified with additives.
The Czochralski method ensures pure growth of gallium and antimony elements.
The naturally low-defect structure of GaSb makes it an ideal material for epitaxial growth.
They are available polished on one or both sides and can be supplied in cut forms.
Gallium antimonide (GaSb) is used for infrared detectors.
Gallium antimonide (GaSb) is used for infrared LEDs.
Gallium antimonide (GaSb) is used for transistors.
Gallium antimonide (GaSb) is used for lasers.
Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
