Gallium Arsenide (GaAs) Wafer
Size: 4”, Thickness: 625±25 μm, Single Side Polished
Technical Properties:
| Property | Value |
|---|---|
| Quality | GaAs |
| Materials | GaAs |
| Size (inch) | 4” |
| Thickness (μm) | 625± 25 |
| Polished | Single Side |
| Dopant | Silicon (N Type) |
| Orientation | (100) |
| Resistivity | (1.2—9.9) E-3 |
| Mobility | 1000-3000 |
| EPD | ≤3000 |
| Growth Method | VGF |
| OF Length | 32±1 |
| IF Length | 18±1 |
Fields of Application for Gallium Arsenide (GaAs)
Gallium arsenide (GaAs) is a compound composed of gallium and arsenic.
Gallium arsenide (GaAs) is a semiconductor material with high electron velocity and high saturated electron mobility.
These properties make gallium arsenide (GaAs) components highly effective for fast electronic switching applications and ultra-high-frequency radio technologies.
In 1907, British researchers observed infrared emission from gallium arsenide, identifying the phenomenon as electroluminescence. Gallium arsenide (GaAs) was also used in solar cells on the Venera 3 mission in 1965, marking its first known operational use in space.
Vertical gradient freeze is the most common method for producing GaAs wafers.
Mainly used in circuits, electronic components, and solar cell applications.
Carbon, silicon, tellurium, and zinc are among the dopants used to modify the electrical and material properties of gallium arsenide wafers.
Wafer flatness and surface purity are maintained through strict quality standards.
Boron concentration in gallium arsenide wafers depends significantly on the production method.
Gallium arsenide wafers with proper electrical resistivity help prevent high current induction in circuits.
The mobility of GaAs wafers can be adjusted with different doping levels.
Gallium arsenide (GaAs) is used in laser diodes.
Gallium arsenide (GaAs) is used in solar cells.
Gallium arsenide (GaAs) is used in optical windows.
Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
Gallium arsenide (GaAs) is useful in barometers.
Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
Gallium arsenide (GaAs) is useful in high-temperature thermometers.
