Technical Properties
| Property | Value |
|---|---|
| Quality | GaAs |
| Materials | GaAs |
| Size (inch) | 4” |
| Thickness (μm) | 350± 25 |
| Polished | Single Side |
| Dopant | Silicon (N Type) |
| Orientation | (100)2deg off toward <011>±0.5 |
| Resistivity | (1.2—9.9) E-3 |
| Mobility | 1000-3000 |
| EPD | ≤3000 |
| Growth Method | VGF |
| OF Length | 32±1 |
| IF Length | 18±1 |











