Prime FZ-Si Wafer, Size: 3”, Orientation: (100), None Doped, Resistivity: 10000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 380 ± 25 μm

Prime FZ-Si Wafer

Size: 3”, Orientation: (100), None Doped, 2-Side Polished, Thickness: 380 ± 25 μm

Technical Properties:

Description

Float zone (FZ) silicon is a very pure form of silicon produced by vertical zone melting.

Compared to the Czochralski method, FZ silicon crystals exhibit higher purity.

Light impurities in FZ Si wafers allow control over certain defects and improve mechanical strength.

Flat zone silicons have very high resistivity distribution, making them especially suitable for detectors.

Other important properties help prevent detector noise, including minority carrier lifetime and bulk generation current.

However, these properties are secondary to the crystalline structure and purity of the wafer.

Multiple zone refining can also be applied to a rod to further reduce impurity concentrations.

For larger inquiries, please contact us.

Download ……………………….. MSDS