Prime CZ-Si Wafer
Size: 8”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 725 ± 25 μm
Technical Properties
| Property | Value |
|---|---|
| Quality | Prime |
| Materials | CZ-Si |
| Size (inch) | 8” |
| Orientation | (100) |
| Coating | — |
| Thickness (μm) | 725 ± 25 |
| Doping | Boron |
| Resistivity (ohm.cm) | 1-100 |
| Polished | One Side |
Description
Silicon is one of the most abundant elements in the Earth’s crust. Its primary application in wafers is in electronics and technology. Silicon wafers possess very flat, mirror-like surfaces and are produced using the Czochralski (CZ) method to achieve the highest purity.
Depending on the application, silicon wafers can be doped with different elements to tailor their electronic properties. Common dopants include gallium, indium, boron, and nitrogen, which significantly influence the wafer’s conductivity and performance.
Silicon wafers are widely used in semiconductors, microchips, integrated circuits, smartphones, computers, and other electronic devices. A wafer is a thin slice of semiconductor material that serves as the substrate for microelectronic components fabricated on its surface.
