Single Walled Carbon Nanotubes (SWCNT) Array on Monocrystal Silicon
Height: 95 µm
Single Walled Carbon Nanotube (SWCNT) Arrays grown on monocrystal silicon substrates create vertically aligned nanotube structures with exceptional electrical and thermal properties. The high purity and nanoscale dimensions of the tubes enable efficient charge transport and rapid heat dissipation, making them suitable for advanced electronic and energy-related applications.
Technical Properties
| Property | Value |
|---|---|
| SWCNT Purity | 99 wt% |
| Carbon Nanotube Content | >99.5% |
| Outside Diameter | 1–3 nm |
| Inside Diameter | 0.6–1.8 nm |
| Array Height | 95 µm |
| Array Density | <0.30 g/cm³ |
| Specific Surface Area (SSA) | 28 m²/g |
| Electrical Conductivity | 1100 S/m |
Applications
The SWCNT array on monocrystal silicon exhibits:
-
High electrical conductivity
-
Efficient heat dissipation due to its large surface area
-
Alignment and purity suitable for precision devices
These properties make it ideal for:
-
Microelectronics
-
Sensors
-
Power devices
-
Thermal management systems
