Single Walled Carbon Nanotubes (SWCNT) Array on Monocrystal Silicon
Height: 190 µm
Single Walled Carbon Nanotube (SWCNT) Arrays grown on monocrystal silicon substrates form vertically aligned, high-purity nanotube structures known for excellent electrical and thermal transport characteristics. Their uniform alignment and nanoscale diameters support efficient charge movement and rapid heat dissipation, enabling integration into advanced electronic and power systems.
Technical Properties
| Property | Value |
|---|---|
| SWCNT Purity | 99 wt% |
| Carbon Nanotube Content | >99.5% |
| Outside Diameter | 1–3 nm |
| Inside Diameter | 0.6–1.8 nm |
| Array Height | 190 µm |
| Array Density | <0.30 g/cm³ |
| Specific Surface Area (SSA) | 28 m²/g |
| Electrical Conductivity | 1100 S/m |
Applications
The SWCNT array on monocrystal silicon features high electrical conductivity and strong thermal dissipation capability due to its aligned structure and surface area. These characteristics support use in:
-
Microelectronics
-
Sensors
-
Power devices
-
Thermal management applications
