Silicon Carbide Wafer (SiC-4H) – 4H
Size: 2” , Thickness: 350 μm, 4H Area: 80%
Technical Properties:
| Property | Value |
|---|---|
| Quality | Testing Grade |
| Size (inch) | 2” |
| Thickness (μm) | 350 |
| Ra | ≤1 |
| 4H area | 80% |
| Orientation | 4°±0.5° |
| Resistivity | 0.015-0.03 |
| TTV | ≤25 |
| Bow | ≤30 |
| Warp | ≤35 |
| OF Length | 16±2 |
| IF Length | 8±1 |
Fields of Application for Silicon Carbide (SiC-4H) – 4H Wafer
Silicon carbide (SiC) is a rare, synthetically produced compound of silicon and carbon.
Silicon carbide (SiC) wafer exhibits excellent electrical and thermal characteristics. It has low thermal expansion, high hardness, and performs reliably at elevated temperatures. Additionally, silicon carbide (SiC) wafer offers strong resistance to corrosion, erosion, and oxidation. It is also more lustrous than diamonds or cubic zirconia.
Silicon carbide (SiC) crystals possess unique physical and electronic properties. Silicon carbide–based devices are widely used in short-wavelength optoelectronics, as well as in high-temperature and radiation-resistant applications. High-power and high-frequency electronic devices manufactured with SiC outperform those made with Si and GaAs. Below are some common applications of SiC substrates.
SiC-based devices exhibit low lattice mismatch with III-nitride epitaxial layers. Their high thermal conductivity allows use in combustion monitoring systems and various UV-detection applications. SiC semiconductor devices also operate effectively in harsh environments involving high temperature, high power, and intense radiation.
SiC is utilized in the fabrication of high-voltage, high-power components including diodes, power transistors, and high-power microwave devices. Compared to conventional Si devices, SiC-based power devices offer faster switching speeds, higher voltage capability, lower parasitic resistance, smaller size, and reduced cooling requirements due to their high-temperature tolerance.
While Silicon carbide (SiC-4H) – 4H wafer provides superior electronic performance, silicon carbide (SiC-6H) – 6H wafer is more easily produced and extensively researched.
Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.
