Silicon Carbide Wafer (SiC-4H) – 4H Specifications
Product Parameters Table
| Parameter | Specification |
|---|---|
| Product | Silicon Carbide Wafer (SiC-4H) – 4H |
| Quality | Production Grade |
| Size (inch) | 2” |
| Thickness (μm) | 350 |
| Ra | ≤0.3 |
| 4H Area | 1 |
| Orientation | 4° ± 0.5° |
| Resistivity | 0.015 – 0.03 Ω·cm |
| TTV | ≤10 |
| Bow | ≤10 |
| Warp | ≤25 |
| OF Length | 16 ± 2 mm |
| IF Length | 8 ± 1 mm |
Fields of Application – Summary
Silicon Carbide (SiC) 4H wafers are synthetic Si–C compound wafers valued for:
-
Excellent electrical and thermal conductivity
-
Low thermal expansion
-
Extreme hardness
-
High-temperature stability
-
Resistance to corrosion, erosion, and oxidation
-
High brilliance (shinier than diamond or cubic zirconia)
Common Applications
-
High-temperature and high-radiation semiconductor devices
-
High-power and high-frequency electronics
-
Short-wavelength opto-electronic devices (UV LEDs, detectors)
-
III-nitride epitaxy due to low lattice mismatch
-
Combustion monitoring sensors
-
Very high-voltage and high-power devices (diodes, power transistors, microwave devices)
-
Hybrid/electric vehicle power electronics
-
Green energy systems (solar inverters, power modules)
-
LED manufacturing
-
Emerging advanced semiconductor markets
