Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 3000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 200 ± 10 μm

Prime FZ-Si Wafer

Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 200 ± 10 μm

Technical Properties:

Description

Float zone (FZ) silicon is a highly pure silicon produced by vertical zone melting.

Compared to the Czochralski method, FZ silicon crystals have higher purity.

Light impurities in FZ Si wafers allow control over certain defects and improve mechanical strength.

Flat zone silicons exhibit very high resistivity distribution, making them especially suitable for detectors.

Other properties, such as minority carrier lifetime and bulk generation current, help reduce detector noise.

However, these properties are secondary to the wafer’s crystalline structure and purity.

Multiple zone refining can be applied to a rod to further reduce impurity concentrations.

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Download ……………………….. MSDS