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Prime Si+Si3N4 Wafer, Size: 4”, Orientaion: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 1000 nm

Prime Si+Si3N4 Wafer, Size: 4”, Orientaion: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 1000 nm

Price range: $128.22 through $2,762.47

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Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 380± 15 μm, Coating 1000 nm

Technical Properties:

Quality
Prime

Materials
Si+Si3N4

Size (inch)
4”

Orientation
(100)

Coating
1000 nm

Thickness (μm)
380± 15

Doping
Boron

Resistivity (ohm.cm)
1-10

Polished
Double Side

Description

Silicon nitride (Si3N4, SiN) offers outstanding mechanical and thermal stability.

It is commonly employed for hard masks, dielectric layers, and passivation coatings.

Silicon nitride is naturally hard and provides strong thermal shock resistance and oxidation resistance.

It also delivers high-temperature strength, creep resistance, and oxidation durability.

Its low thermal expansion coefficient ensures excellent resistance to thermal shock.

For larger inquiries, please contact us.

Download ……………………….. MSDS

Size: 1 piece, 5 pieces, 25 pieces

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