Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 70 nm

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 70 nm

Technical Properties:

Description

Silicon nitride (Si3N4, SiN) provides exceptional mechanical and thermal stability.

It is widely used for hard masks, dielectric layers, and passivation applications.

Silicon nitride is inherently hard and offers strong thermal shock resistance and oxidation resistance.

It also delivers high-temperature strength, creep resistance, and reliable oxidation resistance.

Its low thermal expansion coefficient ensures excellent thermal shock resistance.

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Download ……………………….. MSDS