Silicon (Si) Sputtering Targets, P-type
Purity: 99.999%, Size: 3”, Thickness: 0.125”
Sputtering is a proven technology capable of depositing thin films from a wide variety of materials onto diverse substrate shapes and sizes.
The process using sputter targets is repeatable and scalable, making it suitable for both small research and development projects and larger
production batches involving medium to large substrate areas. Depending on the process parameters, chemical reactions can occur on the target
surface, in-flight, or directly on the substrate. Although sputter deposition involves many variables, this complexity allows experts extensive
control over film growth and microstructure.
Applications of Sputtering Targets;
Sputtering targets are used for film deposition through a method in which material is eroded from a “target” and deposited onto a “substrate,”
such as a silicon wafer.
Semiconductor sputtering targets are also used for etching applications where a high degree of etching anisotropy is required and selectivity
is not the primary concern.
Sputter targets are further used in analytical techniques that require controlled material removal.
One example is secondary ion mass spectrometry (SIMS), where the target sample is sputtered at a constant rate. As material is removed, the
identity and concentration of sputtered atoms are measured using mass spectrometry. With the aid of the sputtering target, the composition of
the material can be accurately determined, enabling detection of even extremely low impurity concentrations.
Sputtering targets also play a role in space-related applications. Sputtering is one of the mechanisms involved in space weathering, a process
that alters the physical and chemical properties of airless bodies such as asteroids and the Moon.
