Bismuth Ferrite (BiFeO3) Sputtering Targets, Indium
Purity: 99.9% Size: 5” Thickness: 0.125”
Sputtering is a reliable technique for depositing thin films from a wide range of materials onto various substrate shapes and sizes. The process is highly repeatable and scalable, suitable for both small R&D projects and medium-to-large production batches. Depending on process parameters, chemical reactions may occur on the target surface, in-flight, or on the substrate, giving experts precise control over film growth and microstructure.
Applications of Sputtering Targets
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Thin Film Deposition: Material is eroded from the target and deposited onto substrates such as silicon wafers.
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Semiconductor Etching: Ideal for cases requiring high etching anisotropy without stringent selectivity.
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Analytical Applications: Enables compositional analysis and detection of trace impurities, as in Secondary Ion Mass Spectroscopy (SIMS).
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Space Applications: Contributes to space weathering, altering physical and chemical properties of airless bodies like asteroids and the Moon.
About Bismuth Ferrite (BiFeO3)
Bismuth ferrite (BiFeO3) is an inorganic perovskite-structured compound and a highly promising multiferroic material. Targets are produced via high-temperature sintering or recrystallization of Bi and Fe oxides to yield single-phase BiFeO3. Indium bonding is recommended for optimal performance.
This Pb-free ferroelectric material exhibits excellent ferroelectric properties, including large remnant polarization, high Curie temperature, and high antiferromagnetic Néel temperature. It uniquely combines magnetic and ferroelectric properties at and above room temperature. Its strong polarization-induced photovoltaic response and 3.3 eV direct band gap make BiFeO3 films highly suitable for advanced ferroelectric photovoltaic studies.
