Bismuth Ferrite (BiFeO3) Sputtering Targets, Indium
Purity: 99.9% Size: 6” Thickness: 0.125”
Sputtering is a reliable method for depositing thin films from various materials onto substrates of different shapes and sizes. The process is highly repeatable and scalable, suitable for both small research projects and medium-to-large production batches. Chemical reactions can occur on the target surface, in-flight, or on the substrate depending on process parameters, giving experts precise control over film growth and microstructure.
Applications of Sputtering Targets
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Thin Film Deposition: Erodes material from the target to deposit thin films on substrates like silicon wafers.
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Semiconductor Etching: Provides high etching anisotropy where selectivity is not a concern.
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Analytical Applications: Enables precise composition analysis and trace impurity detection, as in Secondary Ion Mass Spectroscopy (SIMS).
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Space Applications: Contributes to space weathering, affecting the physical and chemical properties of airless bodies such as asteroids and the Moon.
About Bismuth Ferrite (BiFeO3)
Bismuth ferrite (BiFeO3) is a perovskite-structured inorganic compound and a leading multiferroic material. Targets are fabricated through high-temperature sintering or recrystallization of Bi and Fe oxide mixtures to produce single-phase BiFeO3. Indium bonding is recommended for optimal performance.
This Pb-free ferroelectric material is renowned for its large remnant polarization, high Curie temperature, and high antiferromagnetic Néel temperature. It uniquely exhibits both magnetic and ferroelectric properties at and above room temperature. Its polarization-induced photovoltaic properties and 3.3 eV direct band gap make BiFeO3 films highly suitable for ferroelectric photovoltaic applications, outperforming most other ferroelectric materials.
