Bismuth Ferrite (BiFeO3) Sputtering Targets, Indium
Purity: 99.9% Size: 7” Thickness: 0.125”
Sputtering is a reliable method for depositing thin films from diverse materials onto substrates of various shapes and sizes. The process is highly repeatable and scalable, suitable for both small R&D projects and medium-to-large production batches. Chemical reactions can occur on the target surface, in-flight, or on the substrate depending on process parameters, allowing precise control over film growth and microstructure.
Applications of Sputtering Targets
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Thin Film Deposition: Erosion of the target material deposits thin films on substrates such as silicon wafers.
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Semiconductor Etching: Sputter etching provides high anisotropy where selectivity is not a priority.
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Analytical Applications: Gradual sputtering allows precise composition analysis and detection of trace impurities, as in Secondary Ion Mass Spectroscopy (SIMS).
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Space Applications: Contributes to space weathering, modifying the physical and chemical properties of airless bodies like asteroids and the Moon.
About Bismuth Ferrite (BiFeO3)
Bismuth ferrite (BiFeO3) is a perovskite-structured inorganic compound and a leading multiferroic material. Targets are made via high-temperature sintering or recrystallization of Bi and Fe oxide mixtures to achieve single-phase BiFeO3. Indium bonding is recommended.
This Pb-free ferroelectric material is notable for its large remnant polarization, high Curie temperature, and high antiferromagnetic Néel temperature. It is one of the few materials exhibiting both magnetic and ferroelectric properties at and above room temperature. Its polarization-induced photovoltaic properties and 3.3 eV direct band gap make BiFeO3 films highly suitable for ferroelectric photovoltaic research, outperforming most other ferroelectric materials.
