Bismuth Ferrite (BiFeO3) Sputtering Targets, Indium
Purity: 99.9% Size: 8” Thickness: 0.125”
Sputtering is a highly reliable method for depositing thin films from a wide range of materials onto substrates of various shapes and sizes. This process is repeatable and scalable, making it suitable for both R&D projects and larger production batches. Chemical reactions can occur on the target surface, in-flight, or on the substrate depending on process parameters, giving experts precise control over film growth and microstructure.
Applications of Sputtering Targets
-
Thin Film Deposition: Material is eroded from a “target” and deposited onto a “substrate,” such as silicon wafers.
-
Semiconductor Etching: Sputter etching is used when high anisotropy is required and selectivity is not a concern.
-
Analytical Uses: Gradual target etching allows composition analysis and detection of extremely low impurity levels, as in Secondary Ion Mass Spectroscopy (SIMS).
-
Space Applications: Sputtering contributes to space weathering, altering physical and chemical properties of airless bodies like asteroids and the Moon.
About Bismuth Ferrite (BiFeO3)
Bismuth ferrite (BiFeO3) is an inorganic compound with a perovskite structure and is one of the most promising multiferroic materials. Sputtering targets are typically produced by high-temperature sintering or recrystallization of Bi and Fe oxide mixtures to obtain single-phase BiFeO3. Indium bonding is recommended for these targets.
This Pb-free ferroelectric material is well known for its high remnant polarization, Curie temperature, and antiferromagnetic Néel temperature. It is among the few materials exhibiting both magnetic and ferroelectric properties at and above room temperature. Additionally, its polarization-induced photovoltaic properties, combined with a direct band gap of 3.3 eV, make BiFeO3 films highly suitable for ferroelectric photovoltaic studies, outperforming most other ferroelectric materials.
